TSEE from Ion-Implanted LiF Crystals

TSEE glow curves were studied for ion-implanted LiF single-crystals and for crystals irradiated by X-rays as well as those thermally annealed and irradiated by X-rays (afterward). It was found that the TSEE glow curve for Mg + implanted LiF is influenced by the implantation energy and dose. Also, th...

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Veröffentlicht in:Japanese Journal of Applied Physics 1985-01, Vol.24 (S4), p.225
Hauptverfasser: Kawanishi, Masaharu, Kakiage, Toru, Kido, Yoshiaki, Oda, Keiji, Yamamoto, Takayoshi
Format: Artikel
Sprache:eng
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Zusammenfassung:TSEE glow curves were studied for ion-implanted LiF single-crystals and for crystals irradiated by X-rays as well as those thermally annealed and irradiated by X-rays (afterward). It was found that the TSEE glow curve for Mg + implanted LiF is influenced by the implantation energy and dose. Also, the annealed Mg + implanted LiF (100 kV ×10 12 Mg + /cm 2 ) showed a greater response upon X-rays irradiation (compared with non-implanted LiF). Variations in the TSEE glow curves are qualitatively discussed.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.24S4.225