TSEE from Ion-Implanted LiF Crystals
TSEE glow curves were studied for ion-implanted LiF single-crystals and for crystals irradiated by X-rays as well as those thermally annealed and irradiated by X-rays (afterward). It was found that the TSEE glow curve for Mg + implanted LiF is influenced by the implantation energy and dose. Also, th...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1985-01, Vol.24 (S4), p.225 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | TSEE glow curves were studied for ion-implanted LiF single-crystals and for crystals irradiated by X-rays as well as those thermally annealed and irradiated by X-rays (afterward). It was found that the TSEE glow curve for Mg
+
implanted LiF is influenced by the implantation energy and dose. Also, the annealed Mg
+
implanted LiF (100 kV ×10
12
Mg
+
/cm
2
) showed a greater response upon X-rays irradiation (compared with non-implanted LiF). Variations in the TSEE glow curves are qualitatively discussed. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAPS.24S4.225 |