GaAs P-N Junction Formation by Carbon Ion Implantation

GaAs P-N Junction Formation by Carbon Ion Implantation

Carbon ion implantation accompanied with boron ion implantation into n-type GaAs crystals has proved to markedly improve the carbon activation ratio from 4% to 20%. P-n junction diodes fabricated by this technique showed good rectifying characteristics and well-defined profile.

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Veröffentlicht in:Japanese Journal of Applied Physics 1983-01, Vol.22 (S1), p.405
Hauptverfasser: Mita, Yoh, Tsukada, Noriaki, Hashimoto, Masafumi, Semura, Shigeru, Sugata, Sumio
Format: Artikel
Sprache:eng
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Zusammenfassung:Carbon ion implantation accompanied with boron ion implantation into n-type GaAs crystals has proved to markedly improve the carbon activation ratio from 4% to 20%. P-n junction diodes fabricated by this technique showed good rectifying characteristics and well-defined profile.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.22S1.405