Analysis of Conversion Efficiency of Large Area a-Si: H Solar Cells
The conversion efficiencies of 7.0, 5.5 and 4.7% have been obtained for ITO/n-i-p/SS a-Si: H solar cells with 1.2, 49.and 100 cm 2 area under AM1 (100 mW/cm 2 ) illumination, respectively. The short circuit current improvement by changing the cell structure from the ITO/p-i-n/SS to the ITO/n-i-p/SS...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1982-01, Vol.21 (S1), p.283 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The conversion efficiencies of 7.0, 5.5 and 4.7% have been obtained for ITO/n-i-p/SS a-Si: H solar cells with 1.2, 49.and 100 cm
2
area under AM1 (100 mW/cm
2
) illumination, respectively. The short circuit current improvement by changing the cell structure from the ITO/p-i-n/SS to the ITO/n-i-p/SS is explained by the lower absorption coefficient of n-type windowside layer in the latter structure. The decrease of the fill factor with increasing cell area is mainly caused by the series resistance due to the ITO film and the grid electrodes and the contact resistance between the ITO film and the grid electrodes. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAPS.21S1.283 |