Low-noise terahertz-wave detection by InP/InGaAs Fermi-level managed barrier diode

The noise performance of an InP/InGaAs Fermi-level managed barrier diode (FMB diode) in terahertz-wave detection was investigated by combining a bowtie-antenna-integrated FMB diode with a preamplifier. The fabricated quasi-optical FMB diode module demonstrated broadband signal detection at frequencies ranging from 160 GHz to 1.4 THz with a peak sensitivity of 3.2 MV/W. The lowest noise-equivalent-power of 3.0 pW/ with a wide dynamic range of more than five decades was achieved at 300 GHz.