Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films

The in-plane and out-of-plane mobility-lifetime products of electrons and holes in free-standing hexagonal boron nitride (hBN) films are extracted from current-voltage characteristics of metal-hBN-metal structures measured under external excitations. The in-plane mobility-lifetime products for elect...

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Veröffentlicht in:Applied physics express 2016-06, Vol.9 (6), p.65801
Hauptverfasser: Dahal, Rajendra, Ahmed, Kawser, Wu, Jia Woei, Weltz, Adam, Lu, James Jian-Qiang, Danon, Yaron, Bhat, Ishwara B.
Format: Artikel
Sprache:eng
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Zusammenfassung:The in-plane and out-of-plane mobility-lifetime products of electrons and holes in free-standing hexagonal boron nitride (hBN) films are extracted from current-voltage characteristics of metal-hBN-metal structures measured under external excitations. The in-plane mobility-lifetime products for electrons and holes are ∼2.8 × 10−5 and ∼4.85 × 10−6 cm2/V, measured from lateral carrier collection, whereas the out-of-plane mobility-lifetime products for electrons and holes are ∼5.8 × 10−8 and ∼6.1 × 10−9 cm2/V, measured from vertical carrier collection, respectively. The mobility-lifetime product is a few orders of magnitude higher along the plane than along the out of plane in hBN films.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.065801