Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

For a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) using both straight MOCVD and epitaxial lateral overgrowth techniques (ELOG proper or pendeo overgrowth), the spectra of deep traps were measured by deep-level transient spectroscopy (DLTS) with electrical or optical injection (ODLTS). The results were compared with diffusion length measurement results obtained from electron-beam-induced current experiments. The results strongly indicate that deep electron traps near Ec − 0.56 eV could be the major recombination centers determining the diffusion length values in pendeo samples.