High-mobility β-Ga 2 O 3 ($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

High-mobility β-Ga 2 O 3 ($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

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Veröffentlicht in:Applied physics express 2015-03, Vol.8 (3), p.31101
Hauptverfasser: Oishi, Toshiyuki, Koga, Yuta, Harada, Kazuya, Kasu, Makoto
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container_title Applied physics express
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Kasu, Makoto
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title High-mobility β-Ga 2 O 3 ($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
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