Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy

Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy

This work analyses the Bi incorporation in InAs 1-x Bi x /InAs(100) epilayers grown by MBE through advanced transmission electron microscopy techniques. Samples grown from 350--400 °C resulted in Bi contents ${

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Veröffentlicht in:Applied physics express 2013-11, Vol.6 (11), p.112601-112601-4
Hauptverfasser: Dominguez, Lara, Reyes, Daniel F, Bastiman, Faebian, Sales, David L, Richards, R. D, Mendes, D, David, John P. R, Gonzalez, David
Format: Artikel
Sprache:eng
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Zusammenfassung:This work analyses the Bi incorporation in InAs 1-x Bi x /InAs(100) epilayers grown by MBE through advanced transmission electron microscopy techniques. Samples grown from 350--400 °C resulted in Bi contents ${
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.112601