Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

Crack-free AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on a 200 mm Si substrate by metal--organic chemical vapor deposition (MOCVD) is presented. As grown epitaxial layers show good surface uniformity throughout the wafer. The AlGaN/GaN HEMT with the gate length of 1.5 μm exhibits a high drain current density of 856 mA/mm and a transconductance of 153 mS/mm. The 3.8-μm-thick device demonstrates a high breakdown voltage of 1.1 kV and a low specific on-resistance of 2.3 m$\Omega$ cm 2 for the gate--drain spacing of 20 μm. The figure of merit of our device is calculated as $5.3\times 10^{8}$ V 2 $\Omega^{-1}$ cm -2 .