InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure

High-efficiency InGaN light-emitting diode (LED) with an air-channel structure and a nanoporous structure was fabricated. The air-channel structure was formed through an epitaxial regrowth process on a dry-etched undoped GaN nanorod structure. The GaN:Si nanoporous structure embedded in treated LED...

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Veröffentlicht in:	Applied physics express 2013-01, Vol.6 (1), p.012103-012103-3
Hauptverfasser:	Jiang, Ren-Hao, Lin, Chia-Feng, Yang, Chung-Chieh, Fan, Feng-Hsu, Huang, Yu-Chieh, Tseng, Wang-Po, Cheng, Po-Fu, Wu, Kaun-Chun, Wang, Jing-Hao
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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