InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure
High-efficiency InGaN light-emitting diode (LED) with an air-channel structure and a nanoporous structure was fabricated. The air-channel structure was formed through an epitaxial regrowth process on a dry-etched undoped GaN nanorod structure. The GaN:Si nanoporous structure embedded in treated LED...
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Veröffentlicht in: | Applied physics express 2013-01, Vol.6 (1), p.012103-012103-3 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | High-efficiency InGaN light-emitting diode (LED) with an air-channel structure and a nanoporous structure was fabricated. The air-channel structure was formed through an epitaxial regrowth process on a dry-etched undoped GaN nanorod structure. The GaN:Si nanoporous structure embedded in treated LED structures was fabricated through a photoelectrochemical wet etching process in an oxalic acid solution. Light output powers were enhanced 1.48- and 1.75-fold for the LEDs with an air-channel structure and with a nanoporous/air-channel structure, respectively, in comparison with that of a conventional LED structure. The air-channel structure and the nanoporous GaN:Si structure in the treated LED structures provided high-light-extraction structures. |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.7567/APEX.6.012103 |