InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure
High-efficiency InGaN light-emitting diode (LED) with an air-channel structure and a nanoporous structure was fabricated. The air-channel structure was formed through an epitaxial regrowth process on a dry-etched undoped GaN nanorod structure. The GaN:Si nanoporous structure embedded in treated LED...
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| Veröffentlicht in: | Applied physics express 2013-01, Vol.6 (1), p.012103-012103-3 |
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| container_end_page | 012103-3 |
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| container_title | Applied physics express |
| container_volume | 6 |
| creator | Jiang, Ren-Hao Lin, Chia-Feng Yang, Chung-Chieh Fan, Feng-Hsu Huang, Yu-Chieh Tseng, Wang-Po Cheng, Po-Fu Wu, Kaun-Chun Wang, Jing-Hao |
| description | High-efficiency InGaN light-emitting diode (LED) with an air-channel structure and a nanoporous structure was fabricated. The air-channel structure was formed through an epitaxial regrowth process on a dry-etched undoped GaN nanorod structure. The GaN:Si nanoporous structure embedded in treated LED structures was fabricated through a photoelectrochemical wet etching process in an oxalic acid solution. Light output powers were enhanced 1.48- and 1.75-fold for the LEDs with an air-channel structure and with a nanoporous/air-channel structure, respectively, in comparison with that of a conventional LED structure. The air-channel structure and the nanoporous GaN:Si structure in the treated LED structures provided high-light-extraction structures. |
| doi_str_mv | 10.7567/APEX.6.012103 |
| format | Article |
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The air-channel structure was formed through an epitaxial regrowth process on a dry-etched undoped GaN nanorod structure. The GaN:Si nanoporous structure embedded in treated LED structures was fabricated through a photoelectrochemical wet etching process in an oxalic acid solution. Light output powers were enhanced 1.48- and 1.75-fold for the LEDs with an air-channel structure and with a nanoporous/air-channel structure, respectively, in comparison with that of a conventional LED structure. The air-channel structure and the nanoporous GaN:Si structure in the treated LED structures provided high-light-extraction structures.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/APEX.6.012103</doi></addata></record> |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure |
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