Electrical and Structural Analyses of Solution-Processed Li-Doped ZnO Thin Film Transistors Exposed to Ambient Conditions
We report the electrical and structural features of various Li-doped ZnO thin-film transistors (TFTs) grown via a chemical solution process at low temperature. The time-dependent transfer curves for the 10 at. % Li-doped ZnO TFTs, including second-order lowered off-current magnitude, exhibited only...
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Veröffentlicht in: | Applied physics express 2013-01, Vol.6 (1), p.011101-011101-4 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We report the electrical and structural features of various Li-doped ZnO thin-film transistors (TFTs) grown via a chemical solution process at low temperature. The time-dependent transfer curves for the 10 at. % Li-doped ZnO TFTs, including second-order lowered off-current magnitude, exhibited only a negative shift of $-1.07$ V for 25 days, compared with a $-21.83$ V negative shift of undoped ZnO TFTs. Secondary ion mass spectroscopy and X-ray photoelectron spectroscopy observations clearly demonstrated the structure of Li dopants and the reduction of oxygen vacancies after appropriate doping processes. Finally, the nature of improved stability in the Li-doped ZnO TFTs is described. |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.7567/APEX.6.011101 |