Model for large magnetoresistance effect in p-n junctions

We present a simple model based on the classic Shockley model to explain the magnetotransport in nonmagnetic p-n junctions. Under a magnetic field, the evaluation of the carrier to compensate Lorentz force establishes the necessary space-charge region distribution. The calculated current-voltage (I-V) characteristics under various magnetic fields demonstrate that the conventional nonmagnetic p-n junction can exhibit an extremely large magnetoresistance effect, which is even larger than that in magnetic materials. Because the large magnetoresistance effect that we discussed is based on the conventional p-n junction device, our model provides new insight into the development of semiconductor magnetoelectronics.