High-rate synthesis of Si nanowires using modulated induction thermal plasmas

Using 20 kW Ar-H2 pulse-modulated induction thermal plasma (PMITP) with time-controlled feeding of feedstock (TCFF), numerous Si nanowires were synthesized rapidly at 1,000 mg h−1 without the intentional addition of catalysts. The PMITP + TCFF method is our original method for nanomaterial synthesis...

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Veröffentlicht in:Applied physics express 2017-09, Vol.10 (9), p.96201
Hauptverfasser: Ishisaka, Yosuke, Kodama, Naoto, Kita, Kentaro, Tanaka, Yasunori, Uesugi, Yoshihiko, Ishijima, Tatsuo, Sueyasu, Shiori, Watanabe, Shu, Nakamura, Keitaro
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Sprache:eng
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Zusammenfassung:Using 20 kW Ar-H2 pulse-modulated induction thermal plasma (PMITP) with time-controlled feeding of feedstock (TCFF), numerous Si nanowires were synthesized rapidly at 1,000 mg h−1 without the intentional addition of catalysts. The PMITP + TCFF method is our original method for nanomaterial synthesis. The PMITP periodically provides a unique field including higher-temperature plasma during "on-time and a lower-temperature plasma during "off-time . For rapid and efficient evaporation, metal-grade Si powder feedstock was intermittently injected synchronously into the generated Ar-H2 PMITP. The synthesized products were analyzed using various analytical techniques. The synthesized products were Si nanowires 10-30 nm in diameter with a SiOx surface layer.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.10.096201