GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

We report here a GaN-based resonant cavity light-emitting diode (RCLED) with top and bottom dielectric TiO2/SiO2 distributed Bragg reflector (DBR) mirrors on a silicon substrate. High data transmission in free space at 200 Mbps with an opening in the eye diagram was achieved. The results show that t...

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Veröffentlicht in:Applied physics express 2019-03, Vol.12 (3), p.32004
Hauptverfasser: Cai, Wei, Yuan, Jialei, Ni, Shuyu, Shi, Zheng, Zhou, Weidong, Liu, Yuhuai, Wang, Yongjin, Amano, Hiroshi
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container_issue 3
container_start_page 32004
container_title Applied physics express
container_volume 12
creator Cai, Wei
Yuan, Jialei
Ni, Shuyu
Shi, Zheng
Zhou, Weidong
Liu, Yuhuai
Wang, Yongjin
Amano, Hiroshi
description We report here a GaN-based resonant cavity light-emitting diode (RCLED) with top and bottom dielectric TiO2/SiO2 distributed Bragg reflector (DBR) mirrors on a silicon substrate. High data transmission in free space at 200 Mbps with an opening in the eye diagram was achieved. The results show that the combination of GaN-based LED on silicon and double sided dielectric DBR mirror deposition enables a manufacturable process which provides a unique opportunity for commercialization of RCLED in future solid-state lighting and visible light communication applications.
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