GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

We report here a GaN-based resonant cavity light-emitting diode (RCLED) with top and bottom dielectric TiO2/SiO2 distributed Bragg reflector (DBR) mirrors on a silicon substrate. High data transmission in free space at 200 Mbps with an opening in the eye diagram was achieved. The results show that the combination of GaN-based LED on silicon and double sided dielectric DBR mirror deposition enables a manufacturable process which provides a unique opportunity for commercialization of RCLED in future solid-state lighting and visible light communication applications.