High voltage bifacial amorphous Si quintuple-junction solar cells for IoT devices
Abstarct A bifacial amorphous Si quintuple-junction solar cell was proposed as a power source for IoT devices. Conventionally, interconnection using laser processing has been widely adopted in consumer devices using solar cells as a power source in order to increase the operating voltage, but in thi...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2019-04, Vol.58 (SB), p.SBBF05 |
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creator | Konagai, Makoto Sasaki, Ryo |
description | Abstarct A bifacial amorphous Si quintuple-junction solar cell was proposed as a power source for IoT devices. Conventionally, interconnection using laser processing has been widely adopted in consumer devices using solar cells as a power source in order to increase the operating voltage, but in this paper, we propose a method to make the output voltage 3 V or more by quintuple-junction. First, after describing the necessity of using the bifacial structure, a simple theoretical discussion on the layer thickness of each cell was made. In addition, a-SiOx:H/a-SiOx:H/a-Si:H/a-SiOx:H/a-SiOx:H quintuple-junction solar cells were fabricated by plasma CVD method. As a result, a very high open circuit voltage of 3.4 V was demonstrated under LED light illumination. |
doi_str_mv | 10.7567/1347-4065/aafc98 |
format | Article |
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Conventionally, interconnection using laser processing has been widely adopted in consumer devices using solar cells as a power source in order to increase the operating voltage, but in this paper, we propose a method to make the output voltage 3 V or more by quintuple-junction. First, after describing the necessity of using the bifacial structure, a simple theoretical discussion on the layer thickness of each cell was made. In addition, a-SiOx:H/a-SiOx:H/a-Si:H/a-SiOx:H/a-SiOx:H quintuple-junction solar cells were fabricated by plasma CVD method. As a result, a very high open circuit voltage of 3.4 V was demonstrated under LED light illumination.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/1347-4065/aafc98</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>IOP Publishing</publisher><ispartof>Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBF05</ispartof><rights>2019 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c314t-190a23f22846d4abb8da58962197547bd8aa3bc7697713ac7e14336989383a903</citedby><cites>FETCH-LOGICAL-c314t-190a23f22846d4abb8da58962197547bd8aa3bc7697713ac7e14336989383a903</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1347-4065/aafc98/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Konagai, Makoto</creatorcontrib><creatorcontrib>Sasaki, Ryo</creatorcontrib><title>High voltage bifacial amorphous Si quintuple-junction solar cells for IoT devices</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>Abstarct A bifacial amorphous Si quintuple-junction solar cell was proposed as a power source for IoT devices. Conventionally, interconnection using laser processing has been widely adopted in consumer devices using solar cells as a power source in order to increase the operating voltage, but in this paper, we propose a method to make the output voltage 3 V or more by quintuple-junction. First, after describing the necessity of using the bifacial structure, a simple theoretical discussion on the layer thickness of each cell was made. In addition, a-SiOx:H/a-SiOx:H/a-Si:H/a-SiOx:H/a-SiOx:H quintuple-junction solar cells were fabricated by plasma CVD method. 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J. Appl. Phys</addtitle><date>2019-04-01</date><risdate>2019</risdate><volume>58</volume><issue>SB</issue><spage>SBBF05</spage><pages>SBBF05-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Abstarct A bifacial amorphous Si quintuple-junction solar cell was proposed as a power source for IoT devices. Conventionally, interconnection using laser processing has been widely adopted in consumer devices using solar cells as a power source in order to increase the operating voltage, but in this paper, we propose a method to make the output voltage 3 V or more by quintuple-junction. First, after describing the necessity of using the bifacial structure, a simple theoretical discussion on the layer thickness of each cell was made. In addition, a-SiOx:H/a-SiOx:H/a-Si:H/a-SiOx:H/a-SiOx:H quintuple-junction solar cells were fabricated by plasma CVD method. As a result, a very high open circuit voltage of 3.4 V was demonstrated under LED light illumination.</abstract><pub>IOP Publishing</pub><doi>10.7567/1347-4065/aafc98</doi><tpages>7</tpages></addata></record> |
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title | High voltage bifacial amorphous Si quintuple-junction solar cells for IoT devices |
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