High voltage bifacial amorphous Si quintuple-junction solar cells for IoT devices
Abstarct A bifacial amorphous Si quintuple-junction solar cell was proposed as a power source for IoT devices. Conventionally, interconnection using laser processing has been widely adopted in consumer devices using solar cells as a power source in order to increase the operating voltage, but in thi...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2019-04, Vol.58 (SB), p.SBBF05 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Abstarct A bifacial amorphous Si quintuple-junction solar cell was proposed as a power source for IoT devices. Conventionally, interconnection using laser processing has been widely adopted in consumer devices using solar cells as a power source in order to increase the operating voltage, but in this paper, we propose a method to make the output voltage 3 V or more by quintuple-junction. First, after describing the necessity of using the bifacial structure, a simple theoretical discussion on the layer thickness of each cell was made. In addition, a-SiOx:H/a-SiOx:H/a-Si:H/a-SiOx:H/a-SiOx:H quintuple-junction solar cells were fabricated by plasma CVD method. As a result, a very high open circuit voltage of 3.4 V was demonstrated under LED light illumination. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/1347-4065/aafc98 |