Design of an energy-efficient XNOR gate based on MTJ-based nonvolatile logic-in-memory architecture for binary neural network hardware
A nonvolatile logic gate based on magnetic tunnel junction-based nonvolatile logic-in-memory (NV-LIM) architecture is designed for the implementation of compact and low-power binary neural network (BNN) hardware. The use of NV-LIM architecture for designing BNN hardware makes it possible to reduce b...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2019-04, Vol.58 (SB), p.SBBB01 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A nonvolatile logic gate based on magnetic tunnel junction-based nonvolatile logic-in-memory (NV-LIM) architecture is designed for the implementation of compact and low-power binary neural network (BNN) hardware. The use of NV-LIM architecture for designing BNN hardware makes it possible to reduce both computational and data transfer costs associated with inference functions of deep neural networks. Through an experimental evaluation of a basic component of BNN hardware designed with NV-LIM architecture, we demonstrate that a nonvolatile logic gate designed and optimized based on its quantitative analysis can reduce the circuit area to 32% of a conventional structure as well as reduce the average power consumption assuming intermittent operation in sensor node applications to 14%. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/1347-4065/aafb4d |