Power-Law Growth of the Oxide in the Self-Limiting Oxidation of Si Nanowires

Thermal oxidation of Si nanowires (SiNWs) is studied by two steps. First, it is studied by numerically integrating a reaction–diffusion equation in which the effects of stress in the oxide layer are taken into account to show that the self-limiting oxidation of SiNWs results from the suppression of the reactions in the transition region. Second, it is studied by applying the power-law ansatz to show that the oxidation of SiNWs follows a time- and temperature-dependent power law.