Synthesis of graphitic carbon nitride films from melamine by thermal CVD
Graphitic carbon nitride (g-C3N4) is one of the metal-free photocatalyst materials. Investigation was carried out on the synthesis of g-C3N4 films by thermal CVD using melamine. A thermal chemical vapor deposition apparatus of the hot-wall type was used for g-C3N4 film deposition on a Si substrate....
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description | Graphitic carbon nitride (g-C3N4) is one of the metal-free photocatalyst materials. Investigation was carried out on the synthesis of g-C3N4 films by thermal CVD using melamine. A thermal chemical vapor deposition apparatus of the hot-wall type was used for g-C3N4 film deposition on a Si substrate. Melamine was used as the feedstock. The heating temperatures of the substrate were varied from 773 to 973 K. The g-C3N4 films were analyzed by SEM, XRD, Raman spectroscopy, FT-IR, and XPS. The thickness of the deposited films at a heating temperature of 873 K was from 0.6 to 1.0 µm. A peak of g-C3N4 was observed in the XRD patterns at heating temperatures of 873 and 973 K. From FT-IR and XPS, C and N bonds were observed at a heating temperature of 873 K. We concluded that g-C3N4 films of thickness 0.6 to 1.0 µm were obtained at a heating temperature of 873 K. |
doi_str_mv | 10.7209/tanso.2017.8 |
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Investigation was carried out on the synthesis of g-C3N4 films by thermal CVD using melamine. A thermal chemical vapor deposition apparatus of the hot-wall type was used for g-C3N4 film deposition on a Si substrate. Melamine was used as the feedstock. The heating temperatures of the substrate were varied from 773 to 973 K. The g-C3N4 films were analyzed by SEM, XRD, Raman spectroscopy, FT-IR, and XPS. The thickness of the deposited films at a heating temperature of 873 K was from 0.6 to 1.0 µm. A peak of g-C3N4 was observed in the XRD patterns at heating temperatures of 873 and 973 K. From FT-IR and XPS, C and N bonds were observed at a heating temperature of 873 K. We concluded that g-C3N4 films of thickness 0.6 to 1.0 µm were obtained at a heating temperature of 873 K.</description><identifier>ISSN: 0371-5345</identifier><identifier>EISSN: 1884-5495</identifier><identifier>DOI: 10.7209/tanso.2017.8</identifier><language>eng</language><publisher>THE CARBON SOCIETY OF JAPAN</publisher><subject>C3N4 ; CVD ; Melamine</subject><ispartof>TANSO, 2017/01/15, Vol.2017(276), pp.8-14</ispartof><rights>2017 The Carbon Society of Japan</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1838-b7206c1abf732331e8f96dde452b4c290c3a04cd7344ea6ab73cef80b3ddbec93</citedby><cites>FETCH-LOGICAL-c1838-b7206c1abf732331e8f96dde452b4c290c3a04cd7344ea6ab73cef80b3ddbec93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Tanaka, Ippei</creatorcontrib><creatorcontrib>Sakamoto, Yukihiro</creatorcontrib><title>Synthesis of graphitic carbon nitride films from melamine by thermal CVD</title><title>TANSO</title><addtitle>TANSO</addtitle><description>Graphitic carbon nitride (g-C3N4) is one of the metal-free photocatalyst materials. Investigation was carried out on the synthesis of g-C3N4 films by thermal CVD using melamine. A thermal chemical vapor deposition apparatus of the hot-wall type was used for g-C3N4 film deposition on a Si substrate. Melamine was used as the feedstock. The heating temperatures of the substrate were varied from 773 to 973 K. The g-C3N4 films were analyzed by SEM, XRD, Raman spectroscopy, FT-IR, and XPS. The thickness of the deposited films at a heating temperature of 873 K was from 0.6 to 1.0 µm. A peak of g-C3N4 was observed in the XRD patterns at heating temperatures of 873 and 973 K. From FT-IR and XPS, C and N bonds were observed at a heating temperature of 873 K. We concluded that g-C3N4 films of thickness 0.6 to 1.0 µm were obtained at a heating temperature of 873 K.</description><subject>C3N4</subject><subject>CVD</subject><subject>Melamine</subject><issn>0371-5345</issn><issn>1884-5495</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNpNkMtOwzAQRS0EElXpjg_wB5DiV2JnicqjSJVY8NhaY2fcGuVR2dn070kpqljNXZw7mjmE3HK21ILV9yP0eVgKxvXSXJAZN0YVparLSzJjUvOilKq8Jouco2OMC6kmdEbW74d-3GGOmQ6BbhPsd3GMnnpIbuhpH8cUG6Qhtl2mIQ0d7bCFLvZI3YFOzdRBS1dfjzfkKkCbcfE35-Tz-eljtS42by-vq4dN4bmRpnDTrZXn4IKWQkqOJtRV06AqhVNe1MxLYMo3WiqFUIHT0mMwzMmmcehrOSd3p70-DTknDHafYgfpYDmzRxH2V4Q9irBmwtcn_DuPsMUzDGn6ssX_sNDVKbApMXVG_A6SxV7-AICBa9o</recordid><startdate>20170115</startdate><enddate>20170115</enddate><creator>Tanaka, Ippei</creator><creator>Sakamoto, Yukihiro</creator><general>THE CARBON SOCIETY OF JAPAN</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20170115</creationdate><title>Synthesis of graphitic carbon nitride films from melamine by thermal CVD</title><author>Tanaka, Ippei ; Sakamoto, Yukihiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1838-b7206c1abf732331e8f96dde452b4c290c3a04cd7344ea6ab73cef80b3ddbec93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>C3N4</topic><topic>CVD</topic><topic>Melamine</topic><toplevel>online_resources</toplevel><creatorcontrib>Tanaka, Ippei</creatorcontrib><creatorcontrib>Sakamoto, Yukihiro</creatorcontrib><collection>CrossRef</collection><jtitle>TANSO</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tanaka, Ippei</au><au>Sakamoto, Yukihiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis of graphitic carbon nitride films from melamine by thermal CVD</atitle><jtitle>TANSO</jtitle><addtitle>TANSO</addtitle><date>2017-01-15</date><risdate>2017</risdate><volume>2017</volume><issue>276</issue><spage>8</spage><epage>14</epage><pages>8-14</pages><issn>0371-5345</issn><eissn>1884-5495</eissn><abstract>Graphitic carbon nitride (g-C3N4) is one of the metal-free photocatalyst materials. Investigation was carried out on the synthesis of g-C3N4 films by thermal CVD using melamine. A thermal chemical vapor deposition apparatus of the hot-wall type was used for g-C3N4 film deposition on a Si substrate. Melamine was used as the feedstock. The heating temperatures of the substrate were varied from 773 to 973 K. The g-C3N4 films were analyzed by SEM, XRD, Raman spectroscopy, FT-IR, and XPS. The thickness of the deposited films at a heating temperature of 873 K was from 0.6 to 1.0 µm. A peak of g-C3N4 was observed in the XRD patterns at heating temperatures of 873 and 973 K. From FT-IR and XPS, C and N bonds were observed at a heating temperature of 873 K. We concluded that g-C3N4 films of thickness 0.6 to 1.0 µm were obtained at a heating temperature of 873 K.</abstract><pub>THE CARBON SOCIETY OF JAPAN</pub><doi>10.7209/tanso.2017.8</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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title | Synthesis of graphitic carbon nitride films from melamine by thermal CVD |
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