Synthesis of graphitic carbon nitride films from melamine by thermal CVD

Graphitic carbon nitride (g-C3N4) is one of the metal-free photocatalyst materials. Investigation was carried out on the synthesis of g-C3N4 films by thermal CVD using melamine. A thermal chemical vapor deposition apparatus of the hot-wall type was used for g-C3N4 film deposition on a Si substrate. Melamine was used as the feedstock. The heating temperatures of the substrate were varied from 773 to 973 K. The g-C3N4 films were analyzed by SEM, XRD, Raman spectroscopy, FT-IR, and XPS. The thickness of the deposited films at a heating temperature of 873 K was from 0.6 to 1.0 µm. A peak of g-C3N4 was observed in the XRD patterns at heating temperatures of 873 and 973 K. From FT-IR and XPS, C and N bonds were observed at a heating temperature of 873 K. We concluded that g-C3N4 films of thickness 0.6 to 1.0 µm were obtained at a heating temperature of 873 K.