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We have recently made nanometer-scale structure fabrication using field evaporation in the scanning tunneling microscope (STM) for a Si (111) sample with a W tip by changing the polarity, magnitude and duration of the voltage applied to the tip. A theoretical framework that can interpret/predict the...

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Veröffentlicht in:Nihon Kessho Gakkaishi 1991/06/30, Vol.33(3), pp.158-168
Hauptverfasser: AONO, Masakazu, KOBAYASHI, Ataru, UCHIDA, Hironaga, NEJOH, Hitoshi, NOMURA, Eiichi
Format: Artikel
Sprache:eng
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Zusammenfassung:We have recently made nanometer-scale structure fabrication using field evaporation in the scanning tunneling microscope (STM) for a Si (111) sample with a W tip by changing the polarity, magnitude and duration of the voltage applied to the tip. A theoretical framework that can interpret/predict the experimental results and similar results reported so far is discussed.
ISSN:0369-4585
1884-5576
DOI:10.5940/jcrsj.33.158