A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS

A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS

This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency...

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Veröffentlicht in:Informatyka, automatyka, pomiary w gospodarce i ochronie środowiska automatyka, pomiary w gospodarce i ochronie środowiska, 2018-05, Vol.8 (2), p.68-71
Hauptverfasser: Fatyga, Karol, Kwaśny, Łukasz, Stefańczak, Bartłomiej
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.
ISSN:2083-0157
2391-6761
DOI:10.5604/01.3001.0012.0715