Simulation-Based Design and Evaluation of Temperature Insensitive Device for SiOC on Insulator Platform

Silicon Oxycarbide (SiOC) has emerged as an intriguing material platform in integrated photonics due to its large adjustable refractive index window and low absorption coefficient. Changes in composition can tailor its physical, optical, and chemical properties over a wide range of parameters. The building-block method to circuit simulation is a useful framework for extensively exploiting photonics potential in vast implementation of complex circuits. Due to the large thermo-optic coefficient of the silicon-on-insulator (SOI) platform's core material, temperature dependency is one of the SiOC platform's key problems. In this paper, we designed and tested a temperature insensitive optical sensor using SiOC on insulator in available simulator, which only propagates single mode through the waveguide. We were able to find the first mode propagation at 600 nm to 1200 nm waveguide widths with the constant height of 220 nm. The significance of MZI based simulated sensor is that it is completely temperature insensitive at 1550 nm wavelength. We also realized from our simulated device that above 1200 nm waveguide width, the device has multimode propagation capability.