探討不同氬氧比和退火條件對於氧化銦鎵鋅薄膜及其在光感測器上應用之特性分析

本次研究為在玻璃基板上製作氧化銦鎵鋅薄膜電晶體，實驗分成三部分。第一部分實驗為沉積氧化銦鎵鋅，探討不同氬氧比下，使用紫外光-可見光光譜儀、X光繞射儀、表面輪廓儀、霍爾效應測量、高解析掃描式電子顯微鏡檢測、橢圓偏光儀及分析材料特性，來找出最佳濺鍍條件。第二部分製作不同厚度SiO2/HfO2雙層絕緣層之IGZO TFTs，厚度分別為160/40(nm) 170/30(nm)、180/20(nm)及190/10(nm)。第三部分製作IGZO光感測器(Photodetector, PD)藉由測量電性進行分析及探討。 This study is to fabricate indium gallium zinc oxide thin film transistors on glass substrates. The experiment is divided into three parts. The first part of the experiment is the deposition of indium gallium zinc oxide, and discusses the use of UV-Vis spectrometer, X-ray diffractometer, surface profiler, Hall effect measurement, high-resolution scanning electron microscope detection, ellipsometer under different argon-oxygen ratios. And analyze the material properties to find the best sputtering conditions. In two parts, IGZO TFTs with different thicknesses of SiO2/HfO2 double-layer insulating layers were fabricated. In the third part, the fabrication of IGZO photodetector (PD) is analyzed and discussed by measuring the electrical properties.