Fabrication Methodology for a Hermetic Sealing Device Using Low Temperature Intrinsic-Silicon/Glass Bonding

Fabrication Methodology for a Hermetic Sealing Device Using Low Temperature Intrinsic-Silicon/Glass Bonding

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Veröffentlicht in:TRANSACTIONS OF THE JAPAN INSTITUTE OF ELECTRONICS PACKAGING 2015, Vol.8 (1), p.74-80
Hauptverfasser: Nomura, Kazuya, Okada, Akiko, Shoji, Shuichi, Ogashiwa, Toshinori, Mizuno, Jun
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container_title TRANSACTIONS OF THE JAPAN INSTITUTE OF ELECTRONICS PACKAGING
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creator Nomura, Kazuya
Okada, Akiko
Shoji, Shuichi
Ogashiwa, Toshinori
Mizuno, Jun
description
doi_str_mv 10.5104/jiepeng.8.74
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title Fabrication Methodology for a Hermetic Sealing Device Using Low Temperature Intrinsic-Silicon/Glass Bonding
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