Current-voltage measurements of Al/a-Se/Au Schottky diode solar cells
Schottky, S., diode Al/a-Se/Au as solar cells were made up by thermal evaporation technique on glass thin slide at a substrate under vacuum (vacuum value equal to 10-5 mbar). The S. barriers have been prepared with different thicknesses (300,500 and 700) nm at room temperature and (343) K annealing...
Gespeichert in:
| Veröffentlicht in: | Kuwait journal of science 2022-04, Vol.49 (2), p.1-14 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 14 |
|---|---|
| container_issue | 2 |
| container_start_page | 1 |
| container_title | Kuwait journal of science |
| container_volume | 49 |
| creator | Fadilah, Mayyadah M. Hamid, Aysar A. Abbas, Rasha al-Ansari, Ramiz Ahmad Muhammad al-Haddad, Rad M. S. |
| description | Schottky, S., diode Al/a-Se/Au as solar cells were made up by thermal evaporation technique on glass thin slide at a substrate under vacuum (vacuum value equal to 10-5 mbar). The S. barriers have been prepared with different thicknesses (300,500 and 700) nm at room temperature and (343) K annealing temperature. The current-voltage (I-V) physical properties of the S. barrier have got that the rectification properties and approved as a solar cell which has been developing with the increasing (annealing temperature, A.T.s, and thickness of layers of S. diode). Experience under lighting shows good efficiency (n), which increased linearly with both consistencies and AT from (0.0318% to 4.064%) and from (0.0318% to 0.4778%). This is for three values of lighting power density (160, 230, 400) mW/cm² in which they behave is similarly. The best efficiency obtained in this work was (12.407) % at a power density of 230 mW/cm², with thickness 500nm and 343K annealing T. Also (15.286) % at 400 mW/cm², with thickness 700nm and 343K annealing T. |
| doi_str_mv | 10.48129/kjs.12729 |
| format | Article |
| fullrecord | <record><control><sourceid>emarefa_cross</sourceid><recordid>TN_cdi_crossref_primary_10_48129_kjs_12729</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1500284</sourcerecordid><originalsourceid>FETCH-LOGICAL-c213t-87b8abaee2a34fa867cb532be8d0b29db915acbab3fbf4c1698f5fa898ed8c7f3</originalsourceid><addsrcrecordid>eNpF0E1Lw0AQgOFFFCy1F3-A7FnYZr-SbI4l1A8oeKiew-xmVttujOwmQv-9oRU9zTA8zOEl5FbwpTZCVtlhn5ZClrK6IDOpeMm0EMXl387NNVmktOecC6WlyMsZWddjjPg5sO8-DPCOtENIY8RuuiXae7oKGbAtZquRbt1HPwyHI213fYs09QEidRhCuiFXHkLCxe-ck7eH9Wv9xDYvj8_1asOcFGpgprQGLCBKUNqDKUpncyUtmpZbWbW2Ejk4C1Z567UTRWV8PrnKYGtc6dWc3J__utinFNE3X3HXQTw2gjenBs3UoDk1mPDdGeMk0MO_zTmXRqsf6e5aWg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Current-voltage measurements of Al/a-Se/Au Schottky diode solar cells</title><source>Alma/SFX Local Collection</source><creator>Fadilah, Mayyadah M. ; Hamid, Aysar A. ; Abbas, Rasha ; al-Ansari, Ramiz Ahmad Muhammad ; al-Haddad, Rad M. S.</creator><creatorcontrib>Fadilah, Mayyadah M. ; Hamid, Aysar A. ; Abbas, Rasha ; al-Ansari, Ramiz Ahmad Muhammad ; al-Haddad, Rad M. S. ; Department of Physics, college of education, Mustansiriyah University, Baghdad, IQ ; Department of Physics, college of sciences, Baghdad University, Baghdad, IQ ; First Karkh directorate of education, Baghdad, IQ ; Distinguished girl secondary school, second Karkh directorate of education, Baghdad, IQ ; Department of Physics, collage of science for women, University of Baghdad, Baghdad, IQ</creatorcontrib><description>Schottky, S., diode Al/a-Se/Au as solar cells were made up by thermal evaporation technique on glass thin slide at a substrate under vacuum (vacuum value equal to 10-5 mbar). The S. barriers have been prepared with different thicknesses (300,500 and 700) nm at room temperature and (343) K annealing temperature. The current-voltage (I-V) physical properties of the S. barrier have got that the rectification properties and approved as a solar cell which has been developing with the increasing (annealing temperature, A.T.s, and thickness of layers of S. diode). Experience under lighting shows good efficiency (n), which increased linearly with both consistencies and AT from (0.0318% to 4.064%) and from (0.0318% to 0.4778%). This is for three values of lighting power density (160, 230, 400) mW/cm² in which they behave is similarly. The best efficiency obtained in this work was (12.407) % at a power density of 230 mW/cm², with thickness 500nm and 343K annealing T. Also (15.286) % at 400 mW/cm², with thickness 700nm and 343K annealing T.</description><identifier>ISSN: 2307-4108</identifier><identifier>EISSN: 2307-4116</identifier><identifier>DOI: 10.48129/kjs.12729</identifier><language>eng</language><publisher>Kuwait: Kuwait University, Academic Publication Council</publisher><ispartof>Kuwait journal of science, 2022-04, Vol.49 (2), p.1-14</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Fadilah, Mayyadah M.</creatorcontrib><creatorcontrib>Hamid, Aysar A.</creatorcontrib><creatorcontrib>Abbas, Rasha</creatorcontrib><creatorcontrib>al-Ansari, Ramiz Ahmad Muhammad</creatorcontrib><creatorcontrib>al-Haddad, Rad M. S.</creatorcontrib><creatorcontrib>Department of Physics, college of education, Mustansiriyah University, Baghdad, IQ</creatorcontrib><creatorcontrib>Department of Physics, college of sciences, Baghdad University, Baghdad, IQ</creatorcontrib><creatorcontrib>First Karkh directorate of education, Baghdad, IQ</creatorcontrib><creatorcontrib>Distinguished girl secondary school, second Karkh directorate of education, Baghdad, IQ</creatorcontrib><creatorcontrib>Department of Physics, collage of science for women, University of Baghdad, Baghdad, IQ</creatorcontrib><title>Current-voltage measurements of Al/a-Se/Au Schottky diode solar cells</title><title>Kuwait journal of science</title><description>Schottky, S., diode Al/a-Se/Au as solar cells were made up by thermal evaporation technique on glass thin slide at a substrate under vacuum (vacuum value equal to 10-5 mbar). The S. barriers have been prepared with different thicknesses (300,500 and 700) nm at room temperature and (343) K annealing temperature. The current-voltage (I-V) physical properties of the S. barrier have got that the rectification properties and approved as a solar cell which has been developing with the increasing (annealing temperature, A.T.s, and thickness of layers of S. diode). Experience under lighting shows good efficiency (n), which increased linearly with both consistencies and AT from (0.0318% to 4.064%) and from (0.0318% to 0.4778%). This is for three values of lighting power density (160, 230, 400) mW/cm² in which they behave is similarly. The best efficiency obtained in this work was (12.407) % at a power density of 230 mW/cm², with thickness 500nm and 343K annealing T. Also (15.286) % at 400 mW/cm², with thickness 700nm and 343K annealing T.</description><issn>2307-4108</issn><issn>2307-4116</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNpF0E1Lw0AQgOFFFCy1F3-A7FnYZr-SbI4l1A8oeKiew-xmVttujOwmQv-9oRU9zTA8zOEl5FbwpTZCVtlhn5ZClrK6IDOpeMm0EMXl387NNVmktOecC6WlyMsZWddjjPg5sO8-DPCOtENIY8RuuiXae7oKGbAtZquRbt1HPwyHI213fYs09QEidRhCuiFXHkLCxe-ck7eH9Wv9xDYvj8_1asOcFGpgprQGLCBKUNqDKUpncyUtmpZbWbW2Ejk4C1Z567UTRWV8PrnKYGtc6dWc3J__utinFNE3X3HXQTw2gjenBs3UoDk1mPDdGeMk0MO_zTmXRqsf6e5aWg</recordid><startdate>20220401</startdate><enddate>20220401</enddate><creator>Fadilah, Mayyadah M.</creator><creator>Hamid, Aysar A.</creator><creator>Abbas, Rasha</creator><creator>al-Ansari, Ramiz Ahmad Muhammad</creator><creator>al-Haddad, Rad M. S.</creator><general>Kuwait University, Academic Publication Council</general><scope>ADJCN</scope><scope>AHFXO</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20220401</creationdate><title>Current-voltage measurements of Al/a-Se/Au Schottky diode solar cells</title><author>Fadilah, Mayyadah M. ; Hamid, Aysar A. ; Abbas, Rasha ; al-Ansari, Ramiz Ahmad Muhammad ; al-Haddad, Rad M. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c213t-87b8abaee2a34fa867cb532be8d0b29db915acbab3fbf4c1698f5fa898ed8c7f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fadilah, Mayyadah M.</creatorcontrib><creatorcontrib>Hamid, Aysar A.</creatorcontrib><creatorcontrib>Abbas, Rasha</creatorcontrib><creatorcontrib>al-Ansari, Ramiz Ahmad Muhammad</creatorcontrib><creatorcontrib>al-Haddad, Rad M. S.</creatorcontrib><creatorcontrib>Department of Physics, college of education, Mustansiriyah University, Baghdad, IQ</creatorcontrib><creatorcontrib>Department of Physics, college of sciences, Baghdad University, Baghdad, IQ</creatorcontrib><creatorcontrib>First Karkh directorate of education, Baghdad, IQ</creatorcontrib><creatorcontrib>Distinguished girl secondary school, second Karkh directorate of education, Baghdad, IQ</creatorcontrib><creatorcontrib>Department of Physics, collage of science for women, University of Baghdad, Baghdad, IQ</creatorcontrib><collection>الدوريات العلمية والإحصائية - e-Marefa Academic and Statistical Periodicals</collection><collection>معرفة - المحتوى العربي الأكاديمي المتكامل - e-Marefa Academic Complete</collection><collection>CrossRef</collection><jtitle>Kuwait journal of science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fadilah, Mayyadah M.</au><au>Hamid, Aysar A.</au><au>Abbas, Rasha</au><au>al-Ansari, Ramiz Ahmad Muhammad</au><au>al-Haddad, Rad M. S.</au><aucorp>Department of Physics, college of education, Mustansiriyah University, Baghdad, IQ</aucorp><aucorp>Department of Physics, college of sciences, Baghdad University, Baghdad, IQ</aucorp><aucorp>First Karkh directorate of education, Baghdad, IQ</aucorp><aucorp>Distinguished girl secondary school, second Karkh directorate of education, Baghdad, IQ</aucorp><aucorp>Department of Physics, collage of science for women, University of Baghdad, Baghdad, IQ</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Current-voltage measurements of Al/a-Se/Au Schottky diode solar cells</atitle><jtitle>Kuwait journal of science</jtitle><date>2022-04-01</date><risdate>2022</risdate><volume>49</volume><issue>2</issue><spage>1</spage><epage>14</epage><pages>1-14</pages><issn>2307-4108</issn><eissn>2307-4116</eissn><abstract>Schottky, S., diode Al/a-Se/Au as solar cells were made up by thermal evaporation technique on glass thin slide at a substrate under vacuum (vacuum value equal to 10-5 mbar). The S. barriers have been prepared with different thicknesses (300,500 and 700) nm at room temperature and (343) K annealing temperature. The current-voltage (I-V) physical properties of the S. barrier have got that the rectification properties and approved as a solar cell which has been developing with the increasing (annealing temperature, A.T.s, and thickness of layers of S. diode). Experience under lighting shows good efficiency (n), which increased linearly with both consistencies and AT from (0.0318% to 4.064%) and from (0.0318% to 0.4778%). This is for three values of lighting power density (160, 230, 400) mW/cm² in which they behave is similarly. The best efficiency obtained in this work was (12.407) % at a power density of 230 mW/cm², with thickness 500nm and 343K annealing T. Also (15.286) % at 400 mW/cm², with thickness 700nm and 343K annealing T.</abstract><cop>Kuwait</cop><pub>Kuwait University, Academic Publication Council</pub><doi>10.48129/kjs.12729</doi><tpages>14</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2307-4108 |
| ispartof | Kuwait journal of science, 2022-04, Vol.49 (2), p.1-14 |
| issn | 2307-4108 2307-4116 |
| language | eng |
| recordid | cdi_crossref_primary_10_48129_kjs_12729 |
| source | Alma/SFX Local Collection |
| title | Current-voltage measurements of Al/a-Se/Au Schottky diode solar cells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T04%3A59%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-emarefa_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Current-voltage%20measurements%20of%20Al/a-Se/Au%20Schottky%20diode%20solar%20cells&rft.jtitle=Kuwait%20journal%20of%20science&rft.au=Fadilah,%20Mayyadah%20M.&rft.aucorp=Department%20of%20Physics,%20college%20of%20education,%20Mustansiriyah%20University,%20Baghdad,%20IQ&rft.date=2022-04-01&rft.volume=49&rft.issue=2&rft.spage=1&rft.epage=14&rft.pages=1-14&rft.issn=2307-4108&rft.eissn=2307-4116&rft_id=info:doi/10.48129/kjs.12729&rft_dat=%3Cemarefa_cross%3E1500284%3C/emarefa_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |