Current-voltage measurements of Al/a-Se/Au Schottky diode solar cells

Schottky, S., diode Al/a-Se/Au as solar cells were made up by thermal evaporation technique on glass thin slide at a substrate under vacuum (vacuum value equal to 10-5 mbar). The S. barriers have been prepared with different thicknesses (300,500 and 700) nm at room temperature and (343) K annealing temperature. The current-voltage (I-V) physical properties of the S. barrier have got that the rectification properties and approved as a solar cell which has been developing with the increasing (annealing temperature, A.T.s, and thickness of layers of S. diode). Experience under lighting shows good efficiency (n), which increased linearly with both consistencies and AT from (0.0318% to 4.064%) and from (0.0318% to 0.4778%). This is for three values of lighting power density (160, 230, 400) mW/cm² in which they behave is similarly. The best efficiency obtained in this work was (12.407) % at a power density of 230 mW/cm², with thickness 500nm and 343K annealing T. Also (15.286) % at 400 mW/cm², with thickness 700nm and 343K annealing T.