First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material

First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material

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Veröffentlicht in:World journal of condensed matter physics 2024, Vol.14 (2), p.35-44
Hauptverfasser: Dauda, Abdullahi Alkali, Onimisi, Muhammad Yusuf, Owolabi, Adeyemi Joshua, Lawal, Hammed Adeneyi, Gambo, Hassan Muhammad, Aliyu, Bashir Mohammed, Bala, Surajo, Madugu, Muhammad Lamido, Nainna, Muhammad Abdurrahman, Bamikole, Johnson Akinade
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container_end_page 44
container_issue 2
container_start_page 35
container_title World journal of condensed matter physics
container_volume 14
creator Dauda, Abdullahi Alkali
Onimisi, Muhammad Yusuf
Owolabi, Adeyemi Joshua
Lawal, Hammed Adeneyi
Gambo, Hassan Muhammad
Aliyu, Bashir Mohammed
Bala, Surajo
Madugu, Muhammad Lamido
Nainna, Muhammad Abdurrahman
Bamikole, Johnson Akinade
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doi_str_mv 10.4236/wjcmp.2024.142004
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_4236_wjcmp_2024_142004</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_4236_wjcmp_2024_142004</sourcerecordid><originalsourceid>FETCH-LOGICAL-c854-75f34c2223b78e174c1e845ee3981c2b3cd827f556a29434a131d9cccb9e813f3</originalsourceid><addsrcrecordid>eNo9kNtKAzEYhIMoWGofwLu8wNYcd5NLXa0WKgrt_ZL--6dN6R5IVsW3t2vFuZmBGebiI-SWs7kSMr_7OkDTzwUTas6VYExdkIngOctyK4rL_8ztNZmldGAnKWuM1hNSL0JMQ_YeQwuhP2Kiy_YT0xB2bghdSztPy72LO6Sb6NrkMdJXhL1rQ2rG8iF77HqsqSyzdSjpGpsAXVt_wNCdlm7AGNzxhlx5d0w4-_Mp2SyeNuVLtnp7Xpb3qwyMVlmhvVQghJDbwiAvFHA0SiNKaziIrYTaiMJrnTthlVSOS15bANhaNFx6OSX8fAuxSymir_oYGhe_K86qEVT1C6oaQVVnUPIHQRdcxw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material</title><source>EZB-FREE-00999 freely available EZB journals</source><creator>Dauda, Abdullahi Alkali ; Onimisi, Muhammad Yusuf ; Owolabi, Adeyemi Joshua ; Lawal, Hammed Adeneyi ; Gambo, Hassan Muhammad ; Aliyu, Bashir Mohammed ; Bala, Surajo ; Madugu, Muhammad Lamido ; Nainna, Muhammad Abdurrahman ; Bamikole, Johnson Akinade</creator><creatorcontrib>Dauda, Abdullahi Alkali ; Onimisi, Muhammad Yusuf ; Owolabi, Adeyemi Joshua ; Lawal, Hammed Adeneyi ; Gambo, Hassan Muhammad ; Aliyu, Bashir Mohammed ; Bala, Surajo ; Madugu, Muhammad Lamido ; Nainna, Muhammad Abdurrahman ; Bamikole, Johnson Akinade</creatorcontrib><identifier>ISSN: 2160-6919</identifier><identifier>EISSN: 2160-6927</identifier><identifier>DOI: 10.4236/wjcmp.2024.142004</identifier><language>eng</language><ispartof>World journal of condensed matter physics, 2024, Vol.14 (2), p.35-44</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c854-75f34c2223b78e174c1e845ee3981c2b3cd827f556a29434a131d9cccb9e813f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>Dauda, Abdullahi Alkali</creatorcontrib><creatorcontrib>Onimisi, Muhammad Yusuf</creatorcontrib><creatorcontrib>Owolabi, Adeyemi Joshua</creatorcontrib><creatorcontrib>Lawal, Hammed Adeneyi</creatorcontrib><creatorcontrib>Gambo, Hassan Muhammad</creatorcontrib><creatorcontrib>Aliyu, Bashir Mohammed</creatorcontrib><creatorcontrib>Bala, Surajo</creatorcontrib><creatorcontrib>Madugu, Muhammad Lamido</creatorcontrib><creatorcontrib>Nainna, Muhammad Abdurrahman</creatorcontrib><creatorcontrib>Bamikole, Johnson Akinade</creatorcontrib><title>First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material</title><title>World journal of condensed matter physics</title><issn>2160-6919</issn><issn>2160-6927</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNo9kNtKAzEYhIMoWGofwLu8wNYcd5NLXa0WKgrt_ZL--6dN6R5IVsW3t2vFuZmBGebiI-SWs7kSMr_7OkDTzwUTas6VYExdkIngOctyK4rL_8ztNZmldGAnKWuM1hNSL0JMQ_YeQwuhP2Kiy_YT0xB2bghdSztPy72LO6Sb6NrkMdJXhL1rQ2rG8iF77HqsqSyzdSjpGpsAXVt_wNCdlm7AGNzxhlx5d0w4-_Mp2SyeNuVLtnp7Xpb3qwyMVlmhvVQghJDbwiAvFHA0SiNKaziIrYTaiMJrnTthlVSOS15bANhaNFx6OSX8fAuxSymir_oYGhe_K86qEVT1C6oaQVVnUPIHQRdcxw</recordid><startdate>2024</startdate><enddate>2024</enddate><creator>Dauda, Abdullahi Alkali</creator><creator>Onimisi, Muhammad Yusuf</creator><creator>Owolabi, Adeyemi Joshua</creator><creator>Lawal, Hammed Adeneyi</creator><creator>Gambo, Hassan Muhammad</creator><creator>Aliyu, Bashir Mohammed</creator><creator>Bala, Surajo</creator><creator>Madugu, Muhammad Lamido</creator><creator>Nainna, Muhammad Abdurrahman</creator><creator>Bamikole, Johnson Akinade</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2024</creationdate><title>First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material</title><author>Dauda, Abdullahi Alkali ; Onimisi, Muhammad Yusuf ; Owolabi, Adeyemi Joshua ; Lawal, Hammed Adeneyi ; Gambo, Hassan Muhammad ; Aliyu, Bashir Mohammed ; Bala, Surajo ; Madugu, Muhammad Lamido ; Nainna, Muhammad Abdurrahman ; Bamikole, Johnson Akinade</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c854-75f34c2223b78e174c1e845ee3981c2b3cd827f556a29434a131d9cccb9e813f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Dauda, Abdullahi Alkali</creatorcontrib><creatorcontrib>Onimisi, Muhammad Yusuf</creatorcontrib><creatorcontrib>Owolabi, Adeyemi Joshua</creatorcontrib><creatorcontrib>Lawal, Hammed Adeneyi</creatorcontrib><creatorcontrib>Gambo, Hassan Muhammad</creatorcontrib><creatorcontrib>Aliyu, Bashir Mohammed</creatorcontrib><creatorcontrib>Bala, Surajo</creatorcontrib><creatorcontrib>Madugu, Muhammad Lamido</creatorcontrib><creatorcontrib>Nainna, Muhammad Abdurrahman</creatorcontrib><creatorcontrib>Bamikole, Johnson Akinade</creatorcontrib><collection>CrossRef</collection><jtitle>World journal of condensed matter physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dauda, Abdullahi Alkali</au><au>Onimisi, Muhammad Yusuf</au><au>Owolabi, Adeyemi Joshua</au><au>Lawal, Hammed Adeneyi</au><au>Gambo, Hassan Muhammad</au><au>Aliyu, Bashir Mohammed</au><au>Bala, Surajo</au><au>Madugu, Muhammad Lamido</au><au>Nainna, Muhammad Abdurrahman</au><au>Bamikole, Johnson Akinade</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material</atitle><jtitle>World journal of condensed matter physics</jtitle><date>2024</date><risdate>2024</risdate><volume>14</volume><issue>2</issue><spage>35</spage><epage>44</epage><pages>35-44</pages><issn>2160-6919</issn><eissn>2160-6927</eissn><doi>10.4236/wjcmp.2024.142004</doi><tpages>10</tpages><oa>free_for_read</oa></addata></record>
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title First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T04%3A32%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=First-Principles%20Investigation%20of%20Charge%20Transfer%20Mechanism%20of%20B-Doped%203C-SiC%20Semiconductor%20Material&rft.jtitle=World%20journal%20of%20condensed%20matter%20physics&rft.au=Dauda,%20Abdullahi%20Alkali&rft.date=2024&rft.volume=14&rft.issue=2&rft.spage=35&rft.epage=44&rft.pages=35-44&rft.issn=2160-6919&rft.eissn=2160-6927&rft_id=info:doi/10.4236/wjcmp.2024.142004&rft_dat=%3Ccrossref%3E10_4236_wjcmp_2024_142004%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true