Heterogeneous Integration of a 300-mm Silicon Photonics-CMOS Wafer Stack by Direct Oxide Bonding and Via-Last 3-D Interconnection

A fully functional Si photonics and 65-nm complementary metal-oxide semiconductor (CMOS) heterogeneous three-dimensional (3-D) integration is demonstrated for the first time in a 300-mm production environment. Direct oxide wafer bonding was developed to eliminate voids between silicon on insulator p...

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Veröffentlicht in:Journal of microelectronics and electronic packaging 2016-04, Vol.13 (2), p.71-76
Hauptverfasser: McDonough, Colin, La Tulipe, Doug, Pascual, Dan, Tariello, Paul, Mucci, John, Smalley, Matt, Nguyen, Anh, Vo, Tuan, Johnson, Corbet, Nguyen, Phung, Hebding, Jeremiah, Leake, Gerald, Moresc, Michele, Timurdogan, Erman, Stojanović, Vladimir, Watts, Michael R., Coolbaugh, Douglas
Format: Artikel
Sprache:eng
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Zusammenfassung:A fully functional Si photonics and 65-nm complementary metal-oxide semiconductor (CMOS) heterogeneous three-dimensional (3-D) integration is demonstrated for the first time in a 300-mm production environment. Direct oxide wafer bonding was developed to eliminate voids between silicon on insulator photonics and bulk Si CMOS wafers. A via-last, Cu through-oxide via 3-D integration was developed for low capacitance electrical connections with no impact on the CMOS performance. The 3-D yield approaching 100% was demonstrated on >20,000 via chains.
ISSN:1551-4897
DOI:10.4071/imaps.494