Quantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiC

We discuss the quantification of the secondary electron doping contrast in the scanningelectron microscope on 4H-SiC. It has been observed and studied at length mostly on silicon, but noconclusive theoretical model has been proposed yet. Therefore, we propose a simple physical modelthat allows for a quantification of the doping contrast. It is based on the changes in effective ionizationenergy for different doping concentrations and types. For a better agreement between our model andthe experiment, a locally increased temperature of the electron system or separate quasi Fermi levelsfor electrons and holes have to be assumed. A line profile of the sample under investigation is comparedwith a SRIM simulation of the corresponding implant and shows very good agreement.