Impact of the Parameters for a Chemically-amplified Resist on theLine-edge-roughness by Using a Molecular-scale LithographySimulation

Impact of the Parameters for a Chemically-amplified Resist on theLine-edge-roughness by Using a Molecular-scale LithographySimulation

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Veröffentlicht in:Journal of the Korean Physical Society 2009-08, Vol.55 (2), p.675-680
Hauptverfasser: Kim, Sang-Kon, Oh, Hye-Keun, Jung, Young-Dae, An, Ilsin
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Sprache:eng ; jpn
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container_title Journal of the Korean Physical Society
container_volume 55
creator Kim, Sang-Kon
Oh, Hye-Keun
Jung, Young-Dae
An, Ilsin
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doi_str_mv 10.3938/jkps.55.675
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title Impact of the Parameters for a Chemically-amplified Resist on theLine-edge-roughness by Using a Molecular-scale LithographySimulation
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