Growth of High Quality Mg-doped GaAs by molecular Beam Epitaxy and Its properties
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| Veröffentlicht in: | Journal of the Korean Physical Society 2001-12, Vol.39 (9(1)), p.S518-S521 |
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| Sprache: | eng |
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| container_end_page | S521 |
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| container_issue | 9(1) |
| container_start_page | S518 |
| container_title | Journal of the Korean Physical Society |
| container_volume | 39 |
| creator | Kim, Jong Su Lee, D. Y. Bae, I. H. Lee, J. I. Noh, S. K. Kim, Jin Soo Kim, Gu Hyun Ban, Seungil Kang, Se-Kyung Kim, S. M. Leem, J. Y. Jeon, M. Son, J. S. |
| description | |
| doi_str_mv | 10.3938/jkps.39.S518 |
| format | Article |
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| identifier | ISSN: 0374-4884 |
| ispartof | Journal of the Korean Physical Society, 2001-12, Vol.39 (9(1)), p.S518-S521 |
| issn | 0374-4884 1976-8524 |
| language | eng |
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| source | EZB-FREE-00999 freely available EZB journals |
| title | Growth of High Quality Mg-doped GaAs by molecular Beam Epitaxy and Its properties |
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