Combined application of rutin and silicon sustains maize seedlings osmotic stress tolerance by improving photosynthetic capacity and chlorophyll metabolism

In the current study, the role of external applications of rutin (Rut) and silicon (Si) in stress tolerance was investigated. Although it is known that Si has a role in improving plant defense against a variety of stresses, the role of Rut application in stress response remains unclear. Therefore, the current study was designed to evaluate the function of the synergistic effect of combined Rut and Si applications on the photosynthetic capacity of maize seedlings under osmotic stress. Twenty-one-day-old seedlings were treated with Rut (60 mg L-1) and Si (1 mM), and exposed to osmotic stress (induced by 10% and 15% (w/v) polyethylene glycol) for 48 h. The individual application of Rut and Si and especially the simultaneous treatment of Rut+Si improved the gas exchange parameters, chlorophyll content, photosystem II (PSII) activity, Rubisco enzyme activity, and the expression levels of magnesium chelatase and Rubisco genes, but decreased the expression of chlorophyllase gene under osmotic stress in comparison to osmotic stress alone. These findings suggest that exogenous Rut and Si can improve photosynthetic capacity in maize seedlings exposed to osmotic stress by increasing PSII activity and the expression of genes involved in photosynthesis and chlorophyll metabolism, as well as reducing chlorophyll degradation. The simultaneous treatment of Rut+Si may be useful in developing osmotic stress tolerance of plants.