Prospects of mist CVD for fabrication of β-Ga 2 O 3 MESFETs on β-Ga 2 O 3 (010) substrates
Mist CVD was applied to grow the β -Ga 2 O 3 channel layer of a MESFET on a semi-insulating β -Ga 2 O 3 (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm 2 V –1 s –1 and 6.2 × 10 17 cm −3 , respectively. The device exhibited a pinch-off characteristic with a thr...
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| Veröffentlicht in: | Applied physics express 2023-08, Vol.16 (8), p.81004 |
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| container_title | Applied physics express |
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| creator | Takane, Hitoshi Ando, Yuji Takahashi, Hidemasa Makisako, Ryutaro Ikeda, Hikaru Ueda, Tetsuzo Suda, Jun Tanaka, Katsuhisa Fujita, Shizuo Sugaya, Hidetaka |
| description | Mist CVD was applied to grow the
β
-Ga
2
O
3
channel layer of a MESFET on a semi-insulating
β
-Ga
2
O
3
(010) substrate. The mobility and carrier concentration of the channel layer were 80 cm
2
V
–1
s
–1
and 6.2 × 10
17
cm
−3
, respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of −9 V, and the maximum drain current was 240 mA mm
−1
. The maximum transconductance was 46 mS mm
−1
and the on-resistance was 30 Ω mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future. |
| doi_str_mv | 10.35848/1882-0786/acefa5 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_35848_1882_0786_acefa5</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_35848_1882_0786_acefa5</sourcerecordid><originalsourceid>FETCH-LOGICAL-c905-9e2afe800ac17faafc0e0c8936d7d5632a4b9c840613ef324e265eeaeb5aece23</originalsourceid><addsrcrecordid>eNpVkMFKAzEURYMoWKsf4C5LXYx9SSaZzFLGtgqVChZXQniTvsCI7ZRkXPhbfojf5IyVgqv7uI974R7GLgXcKG1zOxHWygwKayboKaA-YqODdXy4C3vKzlJ6AzC5EmbEXp9im3bku8TbwDdN6nj1csdDG3nAOjYeu6bdDr_vr2yOXPIlV_xx-jybrvrI9p99BQKuefqoUxexo3TOTgK-J7r40zFb9bHqPlss5w_V7SLzJeisJImBLAB6UQTE4IHA21KZdbHWRknM69LbHIxQFJTMSRpNhFRrJE9SjZnY1_p-S4oU3C42G4yfToD7peOG-W5A4fZ01A9cpFeY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Prospects of mist CVD for fabrication of β-Ga 2 O 3 MESFETs on β-Ga 2 O 3 (010) substrates</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Takane, Hitoshi ; Ando, Yuji ; Takahashi, Hidemasa ; Makisako, Ryutaro ; Ikeda, Hikaru ; Ueda, Tetsuzo ; Suda, Jun ; Tanaka, Katsuhisa ; Fujita, Shizuo ; Sugaya, Hidetaka</creator><creatorcontrib>Takane, Hitoshi ; Ando, Yuji ; Takahashi, Hidemasa ; Makisako, Ryutaro ; Ikeda, Hikaru ; Ueda, Tetsuzo ; Suda, Jun ; Tanaka, Katsuhisa ; Fujita, Shizuo ; Sugaya, Hidetaka</creatorcontrib><description>Mist CVD was applied to grow the
β
-Ga
2
O
3
channel layer of a MESFET on a semi-insulating
β
-Ga
2
O
3
(010) substrate. The mobility and carrier concentration of the channel layer were 80 cm
2
V
–1
s
–1
and 6.2 × 10
17
cm
−3
, respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of −9 V, and the maximum drain current was 240 mA mm
−1
. The maximum transconductance was 46 mS mm
−1
and the on-resistance was 30 Ω mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.35848/1882-0786/acefa5</identifier><language>eng</language><ispartof>Applied physics express, 2023-08, Vol.16 (8), p.81004</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c905-9e2afe800ac17faafc0e0c8936d7d5632a4b9c840613ef324e265eeaeb5aece23</citedby><cites>FETCH-LOGICAL-c905-9e2afe800ac17faafc0e0c8936d7d5632a4b9c840613ef324e265eeaeb5aece23</cites><orcidid>0000-0001-8866-145X ; 0000-0002-1409-2802 ; 0000-0002-5453-4943 ; 0000-0001-6384-6693</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>Takane, Hitoshi</creatorcontrib><creatorcontrib>Ando, Yuji</creatorcontrib><creatorcontrib>Takahashi, Hidemasa</creatorcontrib><creatorcontrib>Makisako, Ryutaro</creatorcontrib><creatorcontrib>Ikeda, Hikaru</creatorcontrib><creatorcontrib>Ueda, Tetsuzo</creatorcontrib><creatorcontrib>Suda, Jun</creatorcontrib><creatorcontrib>Tanaka, Katsuhisa</creatorcontrib><creatorcontrib>Fujita, Shizuo</creatorcontrib><creatorcontrib>Sugaya, Hidetaka</creatorcontrib><title>Prospects of mist CVD for fabrication of β-Ga 2 O 3 MESFETs on β-Ga 2 O 3 (010) substrates</title><title>Applied physics express</title><description>Mist CVD was applied to grow the
β
-Ga
2
O
3
channel layer of a MESFET on a semi-insulating
β
-Ga
2
O
3
(010) substrate. The mobility and carrier concentration of the channel layer were 80 cm
2
V
–1
s
–1
and 6.2 × 10
17
cm
−3
, respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of −9 V, and the maximum drain current was 240 mA mm
−1
. The maximum transconductance was 46 mS mm
−1
and the on-resistance was 30 Ω mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future.</description><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpVkMFKAzEURYMoWKsf4C5LXYx9SSaZzFLGtgqVChZXQniTvsCI7ZRkXPhbfojf5IyVgqv7uI974R7GLgXcKG1zOxHWygwKayboKaA-YqODdXy4C3vKzlJ6AzC5EmbEXp9im3bku8TbwDdN6nj1csdDG3nAOjYeu6bdDr_vr2yOXPIlV_xx-jybrvrI9p99BQKuefqoUxexo3TOTgK-J7r40zFb9bHqPlss5w_V7SLzJeisJImBLAB6UQTE4IHA21KZdbHWRknM69LbHIxQFJTMSRpNhFRrJE9SjZnY1_p-S4oU3C42G4yfToD7peOG-W5A4fZ01A9cpFeY</recordid><startdate>20230801</startdate><enddate>20230801</enddate><creator>Takane, Hitoshi</creator><creator>Ando, Yuji</creator><creator>Takahashi, Hidemasa</creator><creator>Makisako, Ryutaro</creator><creator>Ikeda, Hikaru</creator><creator>Ueda, Tetsuzo</creator><creator>Suda, Jun</creator><creator>Tanaka, Katsuhisa</creator><creator>Fujita, Shizuo</creator><creator>Sugaya, Hidetaka</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-8866-145X</orcidid><orcidid>https://orcid.org/0000-0002-1409-2802</orcidid><orcidid>https://orcid.org/0000-0002-5453-4943</orcidid><orcidid>https://orcid.org/0000-0001-6384-6693</orcidid></search><sort><creationdate>20230801</creationdate><title>Prospects of mist CVD for fabrication of β-Ga 2 O 3 MESFETs on β-Ga 2 O 3 (010) substrates</title><author>Takane, Hitoshi ; Ando, Yuji ; Takahashi, Hidemasa ; Makisako, Ryutaro ; Ikeda, Hikaru ; Ueda, Tetsuzo ; Suda, Jun ; Tanaka, Katsuhisa ; Fujita, Shizuo ; Sugaya, Hidetaka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c905-9e2afe800ac17faafc0e0c8936d7d5632a4b9c840613ef324e265eeaeb5aece23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takane, Hitoshi</creatorcontrib><creatorcontrib>Ando, Yuji</creatorcontrib><creatorcontrib>Takahashi, Hidemasa</creatorcontrib><creatorcontrib>Makisako, Ryutaro</creatorcontrib><creatorcontrib>Ikeda, Hikaru</creatorcontrib><creatorcontrib>Ueda, Tetsuzo</creatorcontrib><creatorcontrib>Suda, Jun</creatorcontrib><creatorcontrib>Tanaka, Katsuhisa</creatorcontrib><creatorcontrib>Fujita, Shizuo</creatorcontrib><creatorcontrib>Sugaya, Hidetaka</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takane, Hitoshi</au><au>Ando, Yuji</au><au>Takahashi, Hidemasa</au><au>Makisako, Ryutaro</au><au>Ikeda, Hikaru</au><au>Ueda, Tetsuzo</au><au>Suda, Jun</au><au>Tanaka, Katsuhisa</au><au>Fujita, Shizuo</au><au>Sugaya, Hidetaka</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Prospects of mist CVD for fabrication of β-Ga 2 O 3 MESFETs on β-Ga 2 O 3 (010) substrates</atitle><jtitle>Applied physics express</jtitle><date>2023-08-01</date><risdate>2023</risdate><volume>16</volume><issue>8</issue><spage>81004</spage><pages>81004-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><abstract>Mist CVD was applied to grow the
β
-Ga
2
O
3
channel layer of a MESFET on a semi-insulating
β
-Ga
2
O
3
(010) substrate. The mobility and carrier concentration of the channel layer were 80 cm
2
V
–1
s
–1
and 6.2 × 10
17
cm
−3
, respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of −9 V, and the maximum drain current was 240 mA mm
−1
. The maximum transconductance was 46 mS mm
−1
and the on-resistance was 30 Ω mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future.</abstract><doi>10.35848/1882-0786/acefa5</doi><orcidid>https://orcid.org/0000-0001-8866-145X</orcidid><orcidid>https://orcid.org/0000-0002-1409-2802</orcidid><orcidid>https://orcid.org/0000-0002-5453-4943</orcidid><orcidid>https://orcid.org/0000-0001-6384-6693</orcidid></addata></record> |
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| ispartof | Applied physics express, 2023-08, Vol.16 (8), p.81004 |
| issn | 1882-0778 1882-0786 |
| language | eng |
| recordid | cdi_crossref_primary_10_35848_1882_0786_acefa5 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Prospects of mist CVD for fabrication of β-Ga 2 O 3 MESFETs on β-Ga 2 O 3 (010) substrates |
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