Prospects of mist CVD for fabrication of β-Ga 2 O 3 MESFETs on β-Ga 2 O 3 (010) substrates

Mist CVD was applied to grow the β -Ga 2 O 3 channel layer of a MESFET on a semi-insulating β -Ga 2 O 3 (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm 2 V –1 s –1 and 6.2 × 10 17 cm −3 , respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of −9 V, and the maximum drain current was 240 mA mm −1 . The maximum transconductance was 46 mS mm −1 and the on-resistance was 30 Ω mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future.