Enhancement of the contrast for a hexagonal boron nitride monolayer placed on a silicon nitride/silicon substrate
We propose a visualization technique for identifying an exfoliated monolayer hexagonal boron nitride (hBN) flake placed on a SiN x /Si substrate. The use of a Si substrate with a 63 nm thick SiN x film enhanced the contrast of monolayer hBN at wavelengths of 480 and 530 nm by up to 12% and −12%, res...
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Veröffentlicht in: | Applied physics express 2022-08, Vol.15 (8), p.86502 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We propose a visualization technique for identifying an exfoliated monolayer hexagonal boron nitride (hBN) flake placed on a SiN
x
/Si substrate. The use of a Si substrate with a 63 nm thick SiN
x
film enhanced the contrast of monolayer hBN at wavelengths of 480 and 530 nm by up to 12% and −12%, respectively. The maximum contrast for the Si substrate with SiN
x
is more than four times as large as that for a Si substrate with a ∼90 or ∼300 nm SiO
2
film. Based on the results of the reflectance spectrum measurement and numerical calculations, the enhancement is discussed. |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.35848/1882-0786/ac8270 |