Enhancement of the contrast for a hexagonal boron nitride monolayer placed on a silicon nitride/silicon substrate

We propose a visualization technique for identifying an exfoliated monolayer hexagonal boron nitride (hBN) flake placed on a SiN x /Si substrate. The use of a Si substrate with a 63 nm thick SiN x film enhanced the contrast of monolayer hBN at wavelengths of 480 and 530 nm by up to 12% and −12%, res...

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Veröffentlicht in:Applied physics express 2022-08, Vol.15 (8), p.86502
Hauptverfasser: Hattori, Yoshiaki, Taniguchi, Takashi, Watanabe, Kenji, Kitamura, Masatoshi
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Sprache:eng
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Zusammenfassung:We propose a visualization technique for identifying an exfoliated monolayer hexagonal boron nitride (hBN) flake placed on a SiN x /Si substrate. The use of a Si substrate with a 63 nm thick SiN x film enhanced the contrast of monolayer hBN at wavelengths of 480 and 530 nm by up to 12% and −12%, respectively. The maximum contrast for the Si substrate with SiN x is more than four times as large as that for a Si substrate with a ∼90 or ∼300 nm SiO 2 film. Based on the results of the reflectance spectrum measurement and numerical calculations, the enhancement is discussed.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ac8270