Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO 4 (0001) substrate

We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO 4 (0001) (SAM) substrate without a low-temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded to In 0.13 Ga 0.87 N. We also present the microstructural observation of the InGaN/SAM interface via integrated differential phase contrast-scanning transmission electron microscopy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O–Sc SAM surface and the (Ga,In) atoms of InGaN.