Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure

The transport properties of electrons and holes in the multilayer graphene with a turbostratic structure are investigated by calculating the electrostatic potential induced by ionized impurities on the substrate and integrating the potential profile into Monte Carlo simulation. It is shown that the potential fluctuation caused by the impurities decreases exponentially with the distance from the substrate. The decrease in the potential fluctuation almost nullifies the effect of the impurities on the carrier mobility, showing the carriers to move as fast as the case in the suspended graphene. It is also shown that regardless of impurity density, there is an almost one-to-one correspondence between the mobility and the potential fluctuation. Therefore, it is shown that the use of multilayer graphene with a turbostratic structure is a viable approach to diminish the effects of impurities on the transport properties of graphene, even in systems with high impurity density.