Characterization of nanowire light-emitting diodes with InP/InAsP heterostructures emitting in telecom band

We report the growth and characterization of InP/InAsP/InP nanowires (NWs) and NW light emitting diodes (NW-LEDs) emitting at telecom wavelength. InP-based NWs were grown by selective-area metal-organic vaper-phase epitaxy and a thin InAsP layer was embedded in the NWs. The NW showed sharp emission...

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Veröffentlicht in:Japanese Journal of Applied Physics 2024-03, Vol.63 (3), p.03SP08
Hauptverfasser: Motohisa, Junichi, Tomoya, Akamatsu, Manami, Okamoto, Katsuhiro, Tomioka
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Sprache:eng
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Zusammenfassung:We report the growth and characterization of InP/InAsP/InP nanowires (NWs) and NW light emitting diodes (NW-LEDs) emitting at telecom wavelength. InP-based NWs were grown by selective-area metal-organic vaper-phase epitaxy and a thin InAsP layer was embedded in the NWs. The NW showed sharp emission lines in the low-temperature photoluminescence (PL) spectra, suggesting the formation of QDs in the NW. An NW-LED operation was demonstrated at both room and low temperatures in the telecom band, but it was found that their emission wavelength range and the behavior of blueshift induced by the current injection were different considerably between room and low temperatures. Our results suggest that an efficient path for the carrier injection into the active InAsP layer should be explored for NW-QD-based single photon sources operating via the current injection.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad202f