Fabrication of a wider bandgap θ-Al 2 O 3 by oxidation of ultrathin AlN films for leakage current reduction
Aluminum oxide (Al 2 O 3 ) films were fabricated through the oxidation of ultrathin aluminum nitride (AlN) films. The fabricated films exhibited a leakage current reduction compared to that of conventional Al 2 O 3 films fabricated using atomic layer deposition. This reduction in the leakage current...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2024-03, Vol.63 (3), p.3 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Aluminum oxide (Al
2
O
3
) films were fabricated through the oxidation of ultrathin aluminum nitride (AlN) films. The fabricated films exhibited a leakage current reduction compared to that of conventional Al
2
O
3
films fabricated using atomic layer deposition. This reduction in the leakage current can be attributed to the formation of
θ
-Al
2
O
3
, which has a wider-bandgap than
γ
-Al
2
O
3
. The formation of
θ
-Al
2
O
3
was attributed to the residual stress caused by the oxidation of the AlN thin films. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.35848/1347-4065/ad1c9f |