Growth of (100) β-Ga 2 O 3 single crystal by controlling the capillary behaviors in EFG system

In this study, a numerical simulation of edge-defined film-fed growth (EFG) was performed to determine the appropriate capillary conditions for Ga 2 O 3 melt. Meniscus and capillary rise were significantly influenced by the design of the die in the EFG system. The ratio of the seed crystal and die width was >0.73 for a die width of 4.4 mm. Narrower slit width resulted in higher capillary rise with longer process time compared with wider slit width. Under conditions consistent with the simulation results, highly crystalline (100) β -Ga 2 O 3 single crystals were successfully achieved.