Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga 2 O 3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes

This study elucidates the dislocation responsible for the leakage current in a halide vapor phase epitaxial (001) β-Ga 2 O 3 Schottky barrier diode. A high reverse leakage current of −0.98 μ A was observed at −100 V as an emission pattern via ultrahigh-sensitive emission microscopy. This was attribu...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2023-06, Vol.62 (SF), p.SF1001
Hauptverfasser:	Sdoeung, Sayleap, Sasaki, Kohei, Kawasaki, Katsumi, Hirabayashi, Jun, Kuramata, Akito, Kasu, Makoto
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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