Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga 2 O 3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes

This study elucidates the dislocation responsible for the leakage current in a halide vapor phase epitaxial (001) β-Ga 2 O 3 Schottky barrier diode. A high reverse leakage current of −0.98 μ A was observed at −100 V as an emission pattern via ultrahigh-sensitive emission microscopy. This was attributed to the presence of dislocation. Moreover, the Burgers vector of this dislocation was determined to be ⫽ 〈1 3 ¯ 2〉 from the g · b invisibility criteria via synchrotron X-ray topography observation. This dislocation was speculated to be induced by the relaxation of the strain field surrounding the void and subsequently propagated to the surface. Cross-sectional scanning transmission electron microscopy revealed multiple threading dislocations along the (100) plane.