Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga 2 O 3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes
This study elucidates the dislocation responsible for the leakage current in a halide vapor phase epitaxial (001) β-Ga 2 O 3 Schottky barrier diode. A high reverse leakage current of −0.98 μ A was observed at −100 V as an emission pattern via ultrahigh-sensitive emission microscopy. This was attribu...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2023-06, Vol.62 (SF), p.SF1001 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Sdoeung, Sayleap Sasaki, Kohei Kawasaki, Katsumi Hirabayashi, Jun Kuramata, Akito Kasu, Makoto |
| description | This study elucidates the dislocation responsible for the leakage current in a halide vapor phase epitaxial (001) β-Ga
2
O
3
Schottky barrier diode. A high reverse leakage current of −0.98
μ
A was observed at −100 V as an emission pattern via ultrahigh-sensitive emission microscopy. This was attributed to the presence of dislocation. Moreover, the Burgers vector of this dislocation was determined to be ⫽ 〈1
3
¯
2〉 from the
g
·
b
invisibility criteria via synchrotron X-ray topography observation. This dislocation was speculated to be induced by the relaxation of the strain field surrounding the void and subsequently propagated to the surface. Cross-sectional scanning transmission electron microscopy revealed multiple threading dislocations along the (100) plane. |
| doi_str_mv | 10.35848/1347-4065/acb0b8 |
| format | Article |
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2
O
3
Schottky barrier diode. A high reverse leakage current of −0.98
μ
A was observed at −100 V as an emission pattern via ultrahigh-sensitive emission microscopy. This was attributed to the presence of dislocation. Moreover, the Burgers vector of this dislocation was determined to be ⫽ 〈1
3
¯
2〉 from the
g
·
b
invisibility criteria via synchrotron X-ray topography observation. This dislocation was speculated to be induced by the relaxation of the strain field surrounding the void and subsequently propagated to the surface. Cross-sectional scanning transmission electron microscopy revealed multiple threading dislocations along the (100) plane.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/acb0b8</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF1001</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c908-81d7e2014ff74fe8218a4ecce1d7d93caf18c7230d4746fe4b86ec8d4548e66c3</citedby><cites>FETCH-LOGICAL-c908-81d7e2014ff74fe8218a4ecce1d7d93caf18c7230d4746fe4b86ec8d4548e66c3</cites><orcidid>0000-0002-0881-9454 ; 0000-0002-9583-6120 ; 0000-0002-8923-7703 ; 0000-0001-7695-1652</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Sdoeung, Sayleap</creatorcontrib><creatorcontrib>Sasaki, Kohei</creatorcontrib><creatorcontrib>Kawasaki, Katsumi</creatorcontrib><creatorcontrib>Hirabayashi, Jun</creatorcontrib><creatorcontrib>Kuramata, Akito</creatorcontrib><creatorcontrib>Kasu, Makoto</creatorcontrib><title>Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga 2 O 3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes</title><title>Japanese Journal of Applied Physics</title><description>This study elucidates the dislocation responsible for the leakage current in a halide vapor phase epitaxial (001) β-Ga
2
O
3
Schottky barrier diode. A high reverse leakage current of −0.98
μ
A was observed at −100 V as an emission pattern via ultrahigh-sensitive emission microscopy. This was attributed to the presence of dislocation. Moreover, the Burgers vector of this dislocation was determined to be ⫽ 〈1
3
¯
2〉 from the
g
·
b
invisibility criteria via synchrotron X-ray topography observation. This dislocation was speculated to be induced by the relaxation of the strain field surrounding the void and subsequently propagated to the surface. Cross-sectional scanning transmission electron microscopy revealed multiple threading dislocations along the (100) plane.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNo9UctOwzAQtBBIlMcHcNsjHAJ24ibuEVW8JCQO9MAt2jhrYkjjyHYrwmfxGRz4JlKKelrt7Oxod4axM8Evs6mS6kpkskgkz6dXqCteqT022UH7bMJ5KhI5S9NDdhTC29jmUykm7HveoEcdydtPjNZ14AzUNrRO79oGW1sTrLF3HvoGAwH1NuKHxRbOORcX8POV3CGk8AQZVAOs2uixsa8NBOqCjXY9rixtCBvFpdXeBe36AbCrIQydbryLfhy9JB4HiK53rx77ZkuwMYDtTLuiThOMrGfduBjfB6jQe0t-vNfVFE7YgcE20Ol_PWaL25vF_D55fLp7mF8_JnrGVaJEXVDKhTSmkIZUKhRK0ppGvJ5lGo1QukgzXstC5oZkpXLSqpZTqSjPdXbMxFZ280XwZMre2yX6oRS8_Mui3Bhfbowvt1lkv0H4gxg</recordid><startdate>20230601</startdate><enddate>20230601</enddate><creator>Sdoeung, Sayleap</creator><creator>Sasaki, Kohei</creator><creator>Kawasaki, Katsumi</creator><creator>Hirabayashi, Jun</creator><creator>Kuramata, Akito</creator><creator>Kasu, Makoto</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0881-9454</orcidid><orcidid>https://orcid.org/0000-0002-9583-6120</orcidid><orcidid>https://orcid.org/0000-0002-8923-7703</orcidid><orcidid>https://orcid.org/0000-0001-7695-1652</orcidid></search><sort><creationdate>20230601</creationdate><title>Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga 2 O 3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes</title><author>Sdoeung, Sayleap ; Sasaki, Kohei ; Kawasaki, Katsumi ; Hirabayashi, Jun ; Kuramata, Akito ; Kasu, Makoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c908-81d7e2014ff74fe8218a4ecce1d7d93caf18c7230d4746fe4b86ec8d4548e66c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sdoeung, Sayleap</creatorcontrib><creatorcontrib>Sasaki, Kohei</creatorcontrib><creatorcontrib>Kawasaki, Katsumi</creatorcontrib><creatorcontrib>Hirabayashi, Jun</creatorcontrib><creatorcontrib>Kuramata, Akito</creatorcontrib><creatorcontrib>Kasu, Makoto</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sdoeung, Sayleap</au><au>Sasaki, Kohei</au><au>Kawasaki, Katsumi</au><au>Hirabayashi, Jun</au><au>Kuramata, Akito</au><au>Kasu, Makoto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga 2 O 3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2023-06-01</date><risdate>2023</risdate><volume>62</volume><issue>SF</issue><spage>SF1001</spage><pages>SF1001-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>This study elucidates the dislocation responsible for the leakage current in a halide vapor phase epitaxial (001) β-Ga
2
O
3
Schottky barrier diode. A high reverse leakage current of −0.98
μ
A was observed at −100 V as an emission pattern via ultrahigh-sensitive emission microscopy. This was attributed to the presence of dislocation. Moreover, the Burgers vector of this dislocation was determined to be ⫽ 〈1
3
¯
2〉 from the
g
·
b
invisibility criteria via synchrotron X-ray topography observation. This dislocation was speculated to be induced by the relaxation of the strain field surrounding the void and subsequently propagated to the surface. Cross-sectional scanning transmission electron microscopy revealed multiple threading dislocations along the (100) plane.</abstract><doi>10.35848/1347-4065/acb0b8</doi><orcidid>https://orcid.org/0000-0002-0881-9454</orcidid><orcidid>https://orcid.org/0000-0002-9583-6120</orcidid><orcidid>https://orcid.org/0000-0002-8923-7703</orcidid><orcidid>https://orcid.org/0000-0001-7695-1652</orcidid></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF1001 |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga 2 O 3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes |
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