Microscopic physical origin of charge traps in 3D NAND flash memories

We performed the first-principles calculations for a nitrogen vacancy ( V N ) and hydrogen(H) atom in β -Si 3 N 4 to clarify the atomistic origin of charge traps in silicon nitride (SiN) layers and charge-trapping mechanism used for 3D NAND flash memories. The present calculations showed that V N attracted H impurities and the structures where one Si dangling bond on V N is terminated by an H atom and the remaining two Si atoms form Si–Si bond ( V N -H complexes) were formed in SiN layers. We investigated the electronic behavior of V N -H complexes and found that V N -H complexes act as charge traps. From our results, the atomistic origin of charge traps in SiN layers seems to be V N -H complexes.