Surfactant effect of Bi on InAs quantum dot laser diode

Surfactant effect of Bi on InAs quantum dot laser diode

In this study, InAs multiple-stacked quantum dot lasers were investigated in the 1.55 μ m band using the Bi surfactant effect. The Bi surfactant effect increased the size of the quantum dot and changed the emission wavelength from 1522 to 1554 nm. Moreover, the surfactant effect enhanced the interna...

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Veröffentlicht in:Japanese Journal of Applied Physics 2022-12, Vol.61 (12), p.122001
Hauptverfasser: Yanase, Satoshi, Akahane, Kouichi, Matsumoto, Atsushi, Yamamoto, Naokatsu, Kanno, Atsushi, Maeda, Tomohiro, Sotobayashi, Hideyuki
Format: Artikel
Sprache:eng
Schlagworte:
bismuth
Indium arsenides
quantum dot
Quantum dot lasers
Quantum dots
Quantum efficiency
semiconductor laser diode
Semiconductor lasers
strain-compensation
surfactant effect
Surfactants
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Zusammenfassung:In this study, InAs multiple-stacked quantum dot lasers were investigated in the 1.55 μ m band using the Bi surfactant effect. The Bi surfactant effect increased the size of the quantum dot and changed the emission wavelength from 1522 to 1554 nm. Moreover, the surfactant effect enhanced the internal quantum efficiency of the fabricated broad-area laser from 33% to 54%.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac9e31