Formation of Buried SiC by High-Dose MeV Ion Implantation at High Temperature

A buried layer of crystalline SiC in a silicon wafer is synthesized by 1.5 MeV C+ implantation with a dose of 1.5×1018 ions/cm2 at a high temperature of 880°C. The infrared absorption spectra of this sample shows formation of the SiC crystal, and its crystal structure is found to be of the 3C type (β-SiC) from the X-ray diffraction pattern. The rocking curve shows that crystallographic orientation of the SiC buried layer is aligned with the lattice of the Si substrate.